Time-of-flight secondary-ion mass spectrometry (TOF-SIMS) provides sub-micrometer elemental, chemical, and molecular characterization and imaging of solid surfaces. Different from D-SIMS ("dynamic" SIMS), this technique enables analyzing the outermost one or two mono-layers of a sample while basically preserving molecular information. While D-SIMS provides primarily elemental information, TOF-SIMS surface analysis yields chemical and molecular information. TOF-SIMS is ideal for both organic and inorganic materials, and can be used to characterize both insulating and conductive samples. With detection limits in the ppm to ppb range, shallow depth profiling capabilities, and automated analysis, the nanoTOF can be used to study surface contamination, trace impurities, thin films, delamination failures, etc. It is also a valuable tool to investigate surface modification chemistry and catalyst surface composition. SCSAM’s instrument is equipped with Ga, C60, and Ar guns. An innovative sample handling platform enables the analysis of samples with complex geometries. The maximum sample dimensions are 70 mm x 70 mm x 4 mm. In addition, the system has state-of-the-art charge compensation and ion gun performance.